DocumentCode
1011661
Title
Measurement of optical bistability in an InGaAsP laser amplifier at 1.5 μm
Author
Westlake, H.J. ; Adams, M.J. ; O´Mahony, M.J.
Author_Institution
British Telecom Research Laboratories, Ipswich, UK
Volume
21
Issue
21
fYear
1985
Firstpage
992
Lastpage
993
Abstract
Measured hysteresis characteristics for an amplifier operating at room temperature are presented and compared with the predictions of a computer model. The onset of optical bistability was seen to occur at input powers of around 2 μW.
Keywords
III-V semiconductors; gallium arsenide; hysteresis; indium compounds; laser variables measurement; optical bistability; semiconductor junction lasers; 1.5 microns wavelength; 2 microwatt input power; III-V semiconductors; InGaAsP; amplifier characterisation; computer model; hysteresis characteristics; laser amplifier; measurement; nonlinear optics; optical bistability; room temperature operation; semiconductor lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850701
Filename
4251524
Link To Document