DocumentCode
1011676
Title
Implementing Decay Techniques using 4T Quasi-Static Memory Cells
Author
Juang, Philo ; Diodato, Phil ; Kaxiras, Stefanos ; Skadron, Kevin ; Hu, Zhigang ; Martonosi, Margaret ; Clark, Douglas W.
Volume
1
Issue
1
fYear
2002
Firstpage
10
Lastpage
10
Abstract
This paper proposes the use of four-transistor (4T) cacheand branch predictor array cell designs to address increasingworries regarding leakage power dissipation. While 4T designslose state when infrequently accessed, they have very lowleakage, smaller area, and no capacitive loads to switch. Thisshort paper gives an overview of 4T implementation issues anda preliminary evaluation of leakage-energy savings that showsimprovements of 60-80%
Keywords
Circuit simulation; Delay; Leakage current; Libraries; Microarchitecture; Power dissipation; Power generation; Random access memory; Switches; Transistors;
fLanguage
English
Journal_Title
Computer Architecture Letters
Publisher
ieee
ISSN
1556-6056
Type
jour
DOI
10.1109/L-CA.2002.5
Filename
1650112
Link To Document