• DocumentCode
    1011676
  • Title

    Implementing Decay Techniques using 4T Quasi-Static Memory Cells

  • Author

    Juang, Philo ; Diodato, Phil ; Kaxiras, Stefanos ; Skadron, Kevin ; Hu, Zhigang ; Martonosi, Margaret ; Clark, Douglas W.

  • Volume
    1
  • Issue
    1
  • fYear
    2002
  • Firstpage
    10
  • Lastpage
    10
  • Abstract
    This paper proposes the use of four-transistor (4T) cacheand branch predictor array cell designs to address increasingworries regarding leakage power dissipation. While 4T designslose state when infrequently accessed, they have very lowleakage, smaller area, and no capacitive loads to switch. Thisshort paper gives an overview of 4T implementation issues anda preliminary evaluation of leakage-energy savings that showsimprovements of 60-80%
  • Keywords
    Circuit simulation; Delay; Leakage current; Libraries; Microarchitecture; Power dissipation; Power generation; Random access memory; Switches; Transistors;
  • fLanguage
    English
  • Journal_Title
    Computer Architecture Letters
  • Publisher
    ieee
  • ISSN
    1556-6056
  • Type

    jour

  • DOI
    10.1109/L-CA.2002.5
  • Filename
    1650112