Title :
Delay-triggered optical switching in twin-stripe IRW lasers
Author :
MacLean, D. ; White, I.H. ; Carroll, J.E. ; Plumb, R.G.
Author_Institution :
University of Cambridge, Engineering Department, Cambridge, UK
Abstract :
We report a novel switching mechanism in InGaAsP twin-stripe IRW lasers operating under pulsed conditions at 1.3 ¿m wavelength. An interesting feature of the switch is its ability to discriminate differential delays between the arrival of 10 ns rise time drive pulses to a resolution of less than 200 ps. The switch is caused by changes in the charge carrier density of less than 0.5% which suggests subpicojoule switching energies.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; optical waveguides; semiconductor junction lasers; switching; 1.3 microns wavelength; 10 ns rise time drive pulses; III-V semiconductors; InGaAsP; charge carrier density; delay triggered optical switching; integrated optics; inverted rib waveguide type; pulse operating conditions; semiconductor lasers; subpicojoule switching energies; twin-stripe IRW lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850706
