Monolithic photovoltaic PbS-on-Si infrared-sensor array

Author

Masek, J. ; Ishida, A. ; Zogg, Hans ; Maissen, C. ; Blunier, S.

Author_Institution

AFIF, Swiss Federal Inst. of Technol., Zurich, Switzerland

Volume

11

Issue

1

fYear

1990

Firstpage

12

Lastpage

14

Abstract

The growth of epitaxial narrow-gap PbS-on-Si substrates using a stacked CaF/sub 2/-BaF/sub 2/ intermediate buffer layer and the fabrication of linear arrays of photovoltaic infrared (IR) sensors in the PbS layer are discussed. The sensors of the array exhibit resistance-area products at zero bias of 3 Omega -cm/sup 2/ at 200 K (3.4- mu m cutoff wavelength) and 2*10/sup 5/ Omega -cm/sup 2/ at 84 K (4- mu m cutoff), with corresponding detectivities of 2*10/sup 10/ and 1*10/sup 13/ cm- square root Hz/W, respectively.<>

Keywords

IV-VI semiconductors; infrared detectors; lead compounds; photoconducting devices; silicon; 200 K; 3.4 micron; 4 micron; 84 K; PbS-Si; Si; corresponding detectivities; cutoff wavelength; epitaxial narrow-gap PbS-on-Si substrates; linear arrays; monolithic photovoltaic infrared sensors; resistance-area products; stacked CaF/sub 2/-BaF/sub 2/ intermediate buffer layer; zero bias; Alloying; Fabrication; Infrared image sensors; Infrared sensors; Lead; Photovoltaic systems; Sensor arrays; Solar power generation; Substrates; Thermal sensors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.46915

Filename

46915