Title :
Phase-noise behaviour of frequency dividers implemented with GaAs heterojunction bipolar transistors
Author :
Agarwal, K.K. ; Thompson, W.J. ; Asbeck, P.M.
Author_Institution :
Rockwell International Corporation, Dallas, USA
Abstract :
Near carrier phase-noise performance of GaAs microwave frequency dividers (4 GHz) is investigated. The divide-by-4 circuits are fabricated using heterojunction bipolar transistor (HBT) technology. The phase-noise behaviour of the HBT divider chips is correlated with transistor 1/f noise and is insensitive to bias current variations.
Keywords :
III-V semiconductors; bipolar transistor circuits; frequency dividers; gallium arsenide; microwave integrated circuits; random noise; GaAs heterojunction bipolar transistors; bias current variations; frequency 4 GHz; frequency dividers; microwave IC; phase-noise performance; transistor 1/ f noise;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850712
