• DocumentCode
    1011828
  • Title

    Dependence of semiconductor laser linewidth on measurement time: evidence of predominance of 1/f noise

  • Author

    Kikuchi, Kazuro ; Okoshi, Tadashi

  • Author_Institution
    University of Tokyo, Department of Electronic Engineering, Tokyo, Japan
  • Volume
    21
  • Issue
    22
  • fYear
    1985
  • Firstpage
    1011
  • Lastpage
    1012
  • Abstract
    Linewidths of 1.3 ¿m InGaAsP lasers were measured by using delayed self-heterodyne set-ups with two different delay-line lengths, i.e. with two equivalent measurement times. It has been found that in high-power operation the linewidth increases as the measurement time becomes longer, and that this dependence is explained well by a calculation assuming that the 1/f noise in the FM noise spectrum is the predominant cause of the spectral broadening. The significance of this fact in coherent optical communications is discussed.
  • Keywords
    III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; random noise; semiconductor junction lasers; spectral line breadth; 1/ f noise; DFB laser; FM noises spectrum; InGaAsP lasers; coherent optical communications; delay-line lengths; high-power operation; measurement time; semiconductor laser linewidth; spectral broadening;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850717
  • Filename
    4251544