DocumentCode
1011828
Title
Dependence of semiconductor laser linewidth on measurement time: evidence of predominance of 1/f noise
Author
Kikuchi, Kazuro ; Okoshi, Tadashi
Author_Institution
University of Tokyo, Department of Electronic Engineering, Tokyo, Japan
Volume
21
Issue
22
fYear
1985
Firstpage
1011
Lastpage
1012
Abstract
Linewidths of 1.3 ¿m InGaAsP lasers were measured by using delayed self-heterodyne set-ups with two different delay-line lengths, i.e. with two equivalent measurement times. It has been found that in high-power operation the linewidth increases as the measurement time becomes longer, and that this dependence is explained well by a calculation assuming that the 1/f noise in the FM noise spectrum is the predominant cause of the spectral broadening. The significance of this fact in coherent optical communications is discussed.
Keywords
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; random noise; semiconductor junction lasers; spectral line breadth; 1/ f noise; DFB laser; FM noises spectrum; InGaAsP lasers; coherent optical communications; delay-line lengths; high-power operation; measurement time; semiconductor laser linewidth; spectral broadening;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850717
Filename
4251544
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