Title :
Very low threshold current ridge-waveguide AlGaAs/GaAs single-quantum-well lasers
Author :
Wada, O. ; Sanada, T. ; Kuno, M. ; Fujii, T.
Author_Institution :
Fujitsu Limited, Atsugi, Japan
Abstract :
Ridged-waveguide AlGaAs/GaAs single-quantum-well lasers were fabricated from a molecular-beam-grown GRIN-SCH wafer in which a superlattice buffer layer was introduced. Fabricated diodes exhibited excellent lasing characteristics including a very low threshold current of 5 mA with a T0 value as high as 160 K.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; optical waveguides; semiconductor junction lasers; AlGaAs/GaAs single-quantum-well lasers; low threshold current; molecular-beam-grown GRIN-SCH wafer; ridge waveguide laser; semiconductor laser; superlattice buffer layer; threshold current 5 mA;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850727
