Bipolar transistor fabrication using selective epitaxial growth of P- and B-doped layers in gas-source Si molecular beam epitaxy

Author

Hirayama, Hiroyuki ; Koyama, Kazuhisa ; Tatsumi, Toru

Author_Institution

NEC Corp., Kawasaki, Japan

Volume

11

Issue

1

fYear

1990

Firstpage

18

Lastpage

20

Abstract

Si n-p-n bipolar transistor fabrication using selective epitaxial growth in disilane gas-source Si molecular beam epitaxy (Si-MBE) is discussed. Selective growth of B-doped and P-doped Si was used for the base- and emitter-layer formation, respectively. The growth temperature was 600 degrees C. No ion-implantation process was used. The base ohmic contact was formed using Al selective chemical vapor deposition. The fabricated transistor showed normal emitter-base and base-collector I-V characteristics. The common-emitter characteristics revealed a maximum current gain of 30.<>

Keywords

bipolar transistors; boron; molecular beam epitaxial growth; phosphorus; semiconductor doping; semiconductor growth; 600 degC; Al selective chemical vapor deposition; Si bipolar transistor; Si n-p-n bipolar transistor fabrication; Si/sub 2/H/sub 6/; Si:B; Si:P; base layer formation; base ohmic contact; base-collector I-V characteristics; common-emitter characteristics; disilane gas-source; emitter-base I-V characteristics; emitter-layer formation; growth temperature; maximum current gain; molecular beam epitaxy; selective epitaxial growth; Artificial intelligence; Bipolar transistors; Chemical vapor deposition; Doping; Epitaxial growth; Fabrication; Molecular beam epitaxial growth; Scanning electron microscopy; Surface cleaning; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.46917

Filename

46917