DocumentCode
1012061
Title
Wideband and high-power compressively strained GaInAsP/InP multiple-quantum-well ridge waveguide lasers emitting at 1.3 mu m
Author
Fukushima, T. ; Matsumoto, N. ; Nakayama, H. ; Ikegami, Y. ; Namegaya, T. ; Kasukawa, A. ; Shibata, M.
Author_Institution
Furukawa Electr. Co. Ltd., Yokohama, Japan
Volume
5
Issue
9
fYear
1993
Firstpage
963
Lastpage
965
Abstract
Compressively strained 1.3- mu m GaInAsP/InP multiple-quantum-well (MQW) ridge waveguide lasers were fabricated. Through optimizing the total well thickness, large bandwidth over 11 GHz was achieved, together with high quantum efficiency of about 0.48 W/A and high power output of 60 mW before rollover. The laser also showed less temperature sensitivity up to an elevated temperature of 85 degrees C.<>
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor lasers; sensitivity; 1.3 mum; 11 GHz; 60 mW; 85 degC; GaInAsP-InP; GaInAsP/InP; MQW; compressively strained; elevated temperature; high power output; high quantum efficiency; high-power; large bandwidth; multiple-quantum-well; ridge waveguide lasers; rollover; temperature sensitivity; total well thickness; wideband; Bandwidth; Indium phosphide; Power generation; Quantum well devices; Quantum well lasers; Temperature sensors; Threshold current; Waveguide lasers; Wideband;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.257159
Filename
257159
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