• DocumentCode
    1012108
  • Title

    High field emission in germanium point-contact diodes

  • Author

    Wallis, G. ; Battey, J.F.

  • Author_Institution
    Sylvania Electric Products, Woburn, Mass.
  • Volume
    5
  • Issue
    1
  • fYear
    1958
  • Firstpage
    19
  • Lastpage
    21
  • Abstract
    The effects have been examined of small changes of barrier height on the reverse current of high inverse voltage germanium point-contact diodes. The barrier height was varied by changing the ambient gas. The experimental results are given quantitative interpretation by a field emission theory in the region from about 10 volts to about 150 volts, where other effects become important. Examination of some 50 diodes has shown that diodes which draw low reverse currents behave according to this theory.
  • Keywords
    Conductivity; Dielectric constant; Electron emission; Gases; Germanium; Schottky diodes; Semiconductor diodes; Semiconductor impurities; TV; Tunneling; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0096-2430
  • Type

    jour

  • DOI
    10.1109/T-ED.1958.14322
  • Filename
    1472365