Title :
Strain dependence of the linewidth enhancement factor in long-wavelength tensile- and compressive-strained quantum-well lasers
Author :
Kimura, Akitaka ; Nido, Masaaki ; Murata, Shigeru ; Shimizu, Jun-Ichi ; Naniwae, Kouichi ; Suzuki, Akira
Author_Institution :
Optoelectron. Res. Lab., NEC Corp., Ibaraki, Japan
Abstract :
Values of the linewidth enhancement factor alpha in InGaAs/InGaAsP tensile- and compressive-strained quantum-well (QW) Fabry-Perot lasers are measured and compared to calculated values. The strain dependence of the measured values agrees with that of the calculated values: Values of alpha are smaller for tensile-strained QW lasers than for compressive-strained QW lasers, and alpha decreases with the increase of tensile or compressive strain. According to the model used in the calculation, short-wavelength-composition barriers reduce alpha in compressive-strained QW lasers, and alpha for such lasers is expected to be as low as that for the tensile-strained QW lasers.<>
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor lasers; spectral line breadth; InGaAs-InGaAsP; InGaAs/InGaAsP; QW Fabry-Perot lasers; compressive-strained quantum-well lasers; linewidth enhancement factor; long-wavelength; short-wavelength-composition barriers; strain dependence; tensile-strained quantum-well lasers; Charge carrier density; Electrons; Laser modes; Laser theory; Laser transitions; Laser tuning; Quantum well lasers; Semiconductor lasers; Strain measurement; Tensile strain;
Journal_Title :
Photonics Technology Letters, IEEE
