Strained layer In/sub x/Ga/sub 1-x/As/GaAs and In/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/P multiple-quantum-well optical modulators grown by gas-source MBE

Author

Kim, J.W. ; Chen, C.W. ; Vogt, T.J. ; Woods, L.M. ; Robinson, G.Y. ; Lile, D.L.

Author_Institution

Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA

Volume

5

Issue

9

fYear

1993

Firstpage

987

Lastpage

989

Abstract

The first results on low-power p-i-n diode modulator structures using strained multiple quantum wells (MQW´s) of InGaAs/InGaP grown by gas-source molecular beam epitaxy (MBE) on GaAs are presented. A comparison of transmission, reflection, and photocurrent spectra for these nonresonant devices with those fabricated from InGaAs/GaAs indicates larger modulation, with a maximum change in reflection of >42% observed at 5-V bias at a wavelength of 0.96 mu m.<>

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; molecular beam epitaxial growth; optical modulation; p-i-n diodes; semiconductor growth; 0.96 mum; In/sub x/Ga/sub 1-x/As/GaAs; In/sub x/Ga/sub 1-x/As/In/sub y/Ga/sub 1-y/P; InGaAs-GaAs; InGaAs-InGaP; MQW; gas-source MBE; gas-source molecular beam epitaxy; low-power; multiple-quantum-well optical modulators; nonresonant devices; p-i-n diode modulator structures; photocurrent spectra; reflection spectra; strained layer; transmission spectra; Capacitive sensors; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Optical interconnections; Optical modulation; Optical reflection; P-i-n diodes; Quantum well devices; Substrates;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.257167

Filename

257167