Title :
Monolithic optoelectronic switch based on the integration of a GaAs/AlGaAs heterojunction bipolar transistor and a GaAs vertical-cavity surface-emitting laser
Author :
Zhou, Ping ; Cheng, Julian ; Zolper, J.C. ; Lear, K.L. ; Chalmers, S.A. ; Vawter, G.A. ; Leibenguth, R.E. ; Adams, A.C.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Abstract :
We describe the design and the first experimental demonstration of a monolithic integrated optoelectronic switch combining a GaAs/AlGaAs heterojunction bipolar transistor (HBT) with a vertical-cavity surface-emitting laser (VCSEL). The switch has high current gain (500-700), low power dissipation (27 and 55 mW DC at optical output levels of 0.4 and 1.2 mW, respectively), and a high optical-to-electrical conversion efficiency (150 W/A) under DC bias conditions, thus providing a high-performance electrical-to-optical interface for high-speed optical interconnections.<>
Keywords :
aluminium compounds; bipolar integrated circuits; gallium arsenide; integrated optoelectronics; optical switches; semiconductor lasers; semiconductor switches; 27 mW; 55 mW; DC bias conditions; GaAs; GaAs-AlGaAs; GaAs/AlGaAs; heterojunction bipolar transistor; high current gain; high optical-to-electrical conversion efficiency; high-performance electrical-to-optical interface; high-speed optical interconnections; low power dissipation; monolithic optoelectronic switch; optical output levels; vertical-cavity surface-emitting laser; Gallium arsenide; Heterojunction bipolar transistors; High speed optical techniques; Integrated optoelectronics; Optical design; Optical interconnections; Optical switches; Power dissipation; Surface emitting lasers; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
