Temperature measurements of separate absorption, grading, charge, and multiplication (SAGCM) InP/InGaAs avalanche photodiodes (APD´s)

Author

Tarof, L.E. ; Yu, J. ; Baird, T. ; Bruce, R. ; Knight, D.G.

Author_Institution

Adv. Technol. Lab., Bell-Northern Res., Ottawa, Ont., Canada

Volume

5

Issue

9

fYear

1993

Firstpage

1044

Lastpage

1046

Abstract

Temperature-dependent measurements were per formed on planar separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiodes (APD´s). The bandwidth versus gain dependence, gain, and breakdown voltage are strongly correlated with the temperature. The gain-bandwidth product and minimum gain for useful bandwidth both increase with decreasing temperature or decreasing breakdown voltage. This is the first report of non-room-temperature performance of these devices.<>

Keywords

avalanche photodiodes; gallium arsenide; indium compounds; spectral methods of temperature measurement; APD´s; InP-InGaAs; InP/InGaAs; absorption avalanche photodiodes; avalanche photodiodes; breakdown voltage; charge avalanche photodiodes; gain dependence; gain-bandwidth product; grading avalanche photodiodes; multiplication avalanche photodiodes; nonroom-temperature performance; planar avalanche photodiodes; temperature measurements; temperature-dependent measurements; Absorption; Avalanche photodiodes; Bandwidth; Charge measurement; Current measurement; Fabrication; Indium gallium arsenide; Indium phosphide; Temperature measurement; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.257186

Filename

257186