• DocumentCode
    1012588
  • Title

    True carrier lifetime measurements of semiconductor lasers

  • Author

    Shtengel, G.E. ; Ackerman, D.A. ; Morton, P.A.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • Volume
    31
  • Issue
    20
  • fYear
    1995
  • fDate
    9/28/1995 12:00:00 AM
  • Firstpage
    1747
  • Lastpage
    1748
  • Abstract
    Differential carrier lifetimes of semiconductor lasers are obtained directly from the device impedance measurements. This new technique gives accurate lifetimes down to low bias currents, at which correct lifetimes are an order of magnitude higher than those obtained by a commonly used optical technique. Correct lifetimes reconcile the results of early PL studies and suggest much higher carrier concentrations
  • Keywords
    carrier lifetime; laser variables measurement; semiconductor lasers; bias currents; carrier concentrations; device impedance measurements; differential carrier lifetimes; semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19951191
  • Filename
    469230
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1012588