Very low threshold current density 1.3 μm InAsP/InP/InGaP/InP/GaInAsP strain-compensated multiple quantum well lasers

Author

Kasukawa, A. ; Yokouchi, N. ; Yamanaka, N. ; Iwai, N.

Author_Institution

Yokohama R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan

Volume

31

Issue

20

fYear

1995

fDate

9/28/1995 12:00:00 AM

Firstpage

1749

Lastpage

1750

Abstract

By newly introducing InGaP tensile strained layers as barriers of InAsP compressively strained multiple quantum wells and a thin InP intermediate layer between InGaP and InAsP, high crystalline quality InAsP/InP/InGaP strain-compensated multiple quantum wells were successfully grown by metal organic chemical vapour deposition on a (100) InP substrate. A very low threshold current density of 300 A/cm ² was obtained for triple InAsP/InP/InGaP quantum well lasers emitting at 1.3 μm with a GaInAsP separate confinement layer

Keywords

III-V semiconductors; chemical vapour deposition; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; semiconductor growth; (100) InP substrate; 1.3 micron; InAsP-InP-InGaP-InP-GaInAsP; compressively strained layers; crystalline quality; intermediate layer; metal organic chemical vapour deposition; separate confinement layer; strain-compensated multiple quantum well lasers; tensile strained layers; threshold current density; triple quantum well;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19951223

Filename

469231