Title :
Very low threshold current density 1.3 μm InAsP/InP/InGaP/InP/GaInAsP strain-compensated multiple quantum well lasers
Author :
Kasukawa, A. ; Yokouchi, N. ; Yamanaka, N. ; Iwai, N.
Author_Institution :
Yokohama R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan
fDate :
9/28/1995 12:00:00 AM
Abstract :
By newly introducing InGaP tensile strained layers as barriers of InAsP compressively strained multiple quantum wells and a thin InP intermediate layer between InGaP and InAsP, high crystalline quality InAsP/InP/InGaP strain-compensated multiple quantum wells were successfully grown by metal organic chemical vapour deposition on a (100) InP substrate. A very low threshold current density of 300 A/cm 2 was obtained for triple InAsP/InP/InGaP quantum well lasers emitting at 1.3 μm with a GaInAsP separate confinement layer
Keywords :
III-V semiconductors; chemical vapour deposition; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; semiconductor growth; (100) InP substrate; 1.3 micron; InAsP-InP-InGaP-InP-GaInAsP; compressively strained layers; crystalline quality; intermediate layer; metal organic chemical vapour deposition; separate confinement layer; strain-compensated multiple quantum well lasers; tensile strained layers; threshold current density; triple quantum well;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951223
