DocumentCode :
1012612
Title :
Comparison of the effects of oxygen on cobalt and cobalt-chromium thin films
Author :
Thompson, J.A. ; Stevenson, D.A.
Author_Institution :
Magnetic Peripherals, Inc., Stanford University, Santa Clara, CA.
Volume :
21
Issue :
5
fYear :
1985
fDate :
9/1/1985 12:00:00 AM
Firstpage :
1441
Lastpage :
1443
Abstract :
Oxygen has been intentionally incorported into sputtered Co and Co-Cr films by the addition of controlled amounts of oxygen to the argon sputter gas atmosphere. The influence of the oxygen incorporation was evaluated by the analysis of the magnetic properties and the structural characteristics of the films. The coercivity was found to increase with increasing oxygen incorporation for both Co and Co-Cr films. The saturation magnetization (Ms) in Co decreases as the oxygen content increases whereas Msfor Co-Cr films initially increases as Cr is depleted by selective oxidation. The mechanism for the change in coercivity is attributed to changes in the coupling between magnetic regions, rather than changes in grain size.
Keywords :
Magnetic film memories; Argon; Atmosphere; Cobalt; Coercive force; Magnetic analysis; Magnetic films; Oxygen; Saturation magnetization; Sputtering; Transistors;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1985.1064015
Filename :
1064015
Link To Document :
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