DocumentCode
1012803
Title
Insertion-loss-free 2×2 InGaAsP/InP optical switch fabricated using bandgap energy controlled selective MOVPE
Author
Hamamoto, K. ; Komatsu, K.
Author_Institution
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
Volume
31
Issue
20
fYear
1995
fDate
9/28/1995 12:00:00 AM
Firstpage
1779
Lastpage
1781
Abstract
An insertion-loss-free 2×2 passive splitter/laser diode (LD) amplifier gate switch was fabricated using bandgap energy controlled selective metalorganic vapour phase epitaxy (MOVPE). The InGaAsP bulk core layers of the passive waveguides and LD amplifiers, for which the bandgap energies were different, were simultaneously grown using one-step selective MOVPE. More than 0 dB of fibre-to-fibre gain was achieved at a gate injection current of >75 mA
Keywords
III-V semiconductors; energy gap; gallium arsenide; indium compounds; integrated optics; optical fabrication; optical switches; semiconductor lasers; vapour phase epitaxial growth; 0 dB; 75 mA; InGaAsP-InP; InGaAsP/InP optical switch; bandgap energy control; fabrication; fibre-to-fibre gain; gate injection current; insertion loss; laser diode amplifier; passive waveguide splitter; selective MOVPE;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19951178
Filename
469250
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