Title :
Insertion-loss-free 2×2 InGaAsP/InP optical switch fabricated using bandgap energy controlled selective MOVPE
Author :
Hamamoto, K. ; Komatsu, K.
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
fDate :
9/28/1995 12:00:00 AM
Abstract :
An insertion-loss-free 2×2 passive splitter/laser diode (LD) amplifier gate switch was fabricated using bandgap energy controlled selective metalorganic vapour phase epitaxy (MOVPE). The InGaAsP bulk core layers of the passive waveguides and LD amplifiers, for which the bandgap energies were different, were simultaneously grown using one-step selective MOVPE. More than 0 dB of fibre-to-fibre gain was achieved at a gate injection current of >75 mA
Keywords :
III-V semiconductors; energy gap; gallium arsenide; indium compounds; integrated optics; optical fabrication; optical switches; semiconductor lasers; vapour phase epitaxial growth; 0 dB; 75 mA; InGaAsP-InP; InGaAsP/InP optical switch; bandgap energy control; fabrication; fibre-to-fibre gain; gate injection current; insertion loss; laser diode amplifier; passive waveguide splitter; selective MOVPE;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951178
