DocumentCode
1012832
Title
Double-resonance technique for C/V measurements of semiconductor devices
Author
de Cogan, D. ; Alani, A.
Author_Institution
University of Nottingham, Department of Electrical & Electronic Engineering, Nottingham, UK
Volume
21
Issue
24
fYear
1985
Firstpage
1153
Lastpage
1154
Abstract
A double-resonance technique has been developed for measuring the capacitance/voltage characteristics of junction semiconductor devices. It can be used in regions of forward bias where currently used methods are often unreliable.
Keywords
capacitance measurement; circuit resonance; semiconductor device testing; C-V characteristics; capacitance measurement; capacitance/voltage characteristics; double-resonance technique; forward bias; semiconductor devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850816
Filename
4251676
Link To Document