DocumentCode
1012891
Title
661.7 nm room-temperature CW operation of AlGaInP double-heterostructure lasers with aluminium-containing quaternary active layer
Author
Kobayashi, Kaoru ; Kawata, Shigeo ; Gomyo, A. ; Hino, I. ; Suzuki, Takumi
Author_Institution
NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
Volume
21
Issue
24
fYear
1985
Firstpage
1162
Lastpage
1163
Abstract
We report for the first time on room-temperature (25°C) continuous-wave (CW) operation of AlGaInP double-heterostructure lasers with an aluminium-containing quaternary active layer. The active layer is (Al0.1Ga0.9)0.5In0.5P. The lasing wavelength is 661.7 nm, which is the shortest ever reported for semiconductor lasers. The threshold current is 120 mA (6.7 kA/cm2).
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor junction lasers; (Al0.1Ga0.9)0.5In0.5P active layer; AlGaInP DH laser; room-temperature CW operation; semiconductor lasers; threshold current 120 mA; wavelength 661.7 nm;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850822
Filename
4251684
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