DocumentCode
1012934
Title
High-temperature heavy-hole and light-hole excitons and well-width dependence of excitons in InGaAs/InAIAs multiple-quantum-well structures
Author
Kawamura, Yuriko ; Wakita, Ken ; Asahi, H.
Author_Institution
NTT Atsugi Electrical Communication Laboratories, Atsugi, Japan
Volume
21
Issue
24
fYear
1985
Firstpage
1168
Lastpage
1169
Abstract
Well-resolved heavy-hole and light-hole exciton resonances in the absorption spectrum were observed at temperatures as high as 460 K in InGaAs/InAlAs multiple-quantum-well structures grown by molecular-beam epitaxy for the first time. Well-width dependences of the absorption spectrum and photoluminescence spectrum were also studied. The observed well-width dependences can be explained by monolayer fluctuation and alloy disorder.
Keywords
III-V semiconductors; aluminium compounds; excitons; gallium arsenide; indium compounds; infrared spectra of inorganic solids; luminescence of inorganic solids; photoluminescence; semiconductor epitaxial layers; semiconductor superlattices; III-V semiconductor; InGaAs/InAlAs multiple-quantum-well structures; absorption spectrum; alloy disorder; exciton resonances; heavy hole excitons; light-hole excitons; molecular-beam epitaxy; monolayer fluctuation; photoluminescence spectrum; well-width dependence;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850826
Filename
4251688
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