DocumentCode
1012947
Title
Novel MOS memory for serial signal processing applications
Author
McGrath, D.S. ; Myers, D.J.
Author_Institution
University of Sydney, School of Electrical Engineering, Sydney, Australia
Volume
21
Issue
24
fYear
1985
Firstpage
1170
Lastpage
1171
Abstract
A novel serial memory is reported, based on an array of MOS three transistor cells, which does not require serial-parallel data format convertors on the input and output. It can be used to realise compact, low-power delay elements of programmable length and is suitable for application in serial digital signal processing integrated circuits.
Keywords
CMOS integrated circuits; computerised signal processing; delay circuits; integrated memory circuits; CMOS IC; MOS memory; digital signal processing integrated circuits; low-power delay elements; serial signal processing;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850827
Filename
4251689
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