Analysis of dynamic impatt oscillations caused by radiation induced deep centres with local and homogenous vertical distribution

The occurrence of high-frequency impatt oscillations is related to the presence of charged deep donor states as generated by irradiation processes for carrier lifetime control. This effect is well known in electron-radiated devices. Device simulation predicts a similar effect in locally lifetime-controlled helium-radiated devices. The experiment gives an approval of the simulation results, but shows some unexpected effects as well. An analytical estimation sufficiently predicts the temperature dependence of the threshold voltage for the onset of the oscillations.