Reverse blocking IGBT for matrix converter with ultra-thin wafer technology

A high performance vertical 600 V-50 A IGBT with reverse blocking capability (RB-IGBT) has been developed for the first time. Ultra-thin wafer technology combined with a deep boron diffusion technique results in a great improvement on trade-off performance. Two RB-IGBTs connected in anti-parallel form a bi-directional switch. These bi-directional switches are necessary to implement a high efficiency matrix converter.