• DocumentCode
    1013020
  • Title

    Temperature sensitivity of current gain in power transistors

  • Author

    Reich, Beryard

  • Author_Institution
    U. S. Army Signal Eng. Labs., Fort Monmouth, N. J.
  • Volume
    5
  • Issue
    3
  • fYear
    1958
  • fDate
    7/1/1958 12:00:00 AM
  • Firstpage
    180
  • Lastpage
    182
  • Abstract
    An analysis is made of the factors causing the variation of current gain as a function of operating temperature. As a result, conclusions are reached which indicate that the base resistivity is the major single factor contributing to these variations. Finally, the results of this investigation are directed toward possible applications.
  • Keywords
    Circuit optimization; Conductivity; Electron devices; Germanium; Performance gain; Power transistors; Shape; Signal design; Temperature dependence; Temperature sensors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0096-2430
  • Type

    jour

  • DOI
    10.1109/T-ED.1958.14417
  • Filename
    1472460
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1013020