Title :
Temperature sensitivity of current gain in power transistors
Author_Institution :
U. S. Army Signal Eng. Labs., Fort Monmouth, N. J.
fDate :
7/1/1958 12:00:00 AM
Abstract :
An analysis is made of the factors causing the variation of current gain as a function of operating temperature. As a result, conclusions are reached which indicate that the base resistivity is the major single factor contributing to these variations. Finally, the results of this investigation are directed toward possible applications.
Keywords :
Circuit optimization; Conductivity; Electron devices; Germanium; Performance gain; Power transistors; Shape; Signal design; Temperature dependence; Temperature sensors;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1958.14417
