DocumentCode
1013034
Title
1.6 GHz electroabsorption light modulation in InGaAsP/InP double heterostructures with strip-loaded planar waveguide
Author
Noda, Yasuo ; Suzuki, M. ; Kushiro, Y. ; Akiba, Shigeyuki
Author_Institution
KDD Research & Development Laboratories, Tokyo, Japan
Volume
21
Issue
25
fYear
1985
Firstpage
1182
Lastpage
1183
Abstract
Low-voltage driving and high-speed modulations of InGaAsP/InP electroabsorption modulators with strip-loaded planar waveguide have been described. The modulators were fabricated from VPE-grown InGaAsP/InP double-heterostructure wafers. For ¿=1.55 ¿m incident light an extinction ratio of 20 dB was achieved with an applied voltage of ~¿6 V. The insertion loss was 9.6 dB. The calibrated 3 dB bandwidth was 1.6 GHz.
Keywords
III-V semiconductors; electroabsorption; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical modulation; optical waveguides; InGaAsP/InP double heterostructures; bandwidth 1.6 GHz; electroabsorption light modulation; extinction ratio 20 dB; high-speed modulations; insertion loss 9.6 dB; integrated optics; low voltage driving; strip-loaded planar waveguide;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850835
Filename
4251698
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