Title :
InGaAs-AlGaAs-GaAs strained-layer quantum-well heterostructure square ring lasers
Author :
Han, H. ; Forbes, D.V. ; Coleman, J.J.
Author_Institution :
Mater. Res. Lab., Illinois Univ., Urbana, IL, USA
fDate :
11/1/1995 12:00:00 AM
Abstract :
The processing and optical characteristics of an InGaAs-AlGaAs-GaAs strained-layer quantum-well heterostructure square ring laser (4 μm width and 50-μm/side length) with two output waveguides and two narrow physical gap couplers are described. The ridges and the total internal reflection (TIR) mirrors of the square ring lasers are fabricated by two photolithographic steps with a single SiO2 mask and planarized with polyimide such that the TIR mirrors are etched through the active region while the ridge waveguides are not. Single longitudinal mode operation is observed with a side mode suppression ratio of 20 dB. Asymmetric characteristics of emission spectra from the two output waveguides demonstrates that the square ring lasers operate in traveling wave modes
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser modes; masks; optical fabrication; photolithography; quantum well lasers; ridge waveguides; ring lasers; waveguide lasers; 4 mum; 50 mum; InGaAs-AlGaAs-GaAs; InGaAs-AlGaAs-GaAs strained-layer quantum-well heterostructure square ring lasers; SiO2; SiO2 mask; TIR mirror etching; asymmetric characteristics; mirrors; narrow physical gap couplers; optical characteristics; output waveguides; photolithographic steps; planarized; polyimide; ridge waveguides; side length; side mode suppression ratio; single longitudinal mode operation; square ring lasers; total internal reflection; traveling wave modes; Couplers; Laser modes; Laser theory; Mirrors; Optical waveguides; Quantum well lasers; Quantum wells; Ring lasers; Waveguide discontinuities; Waveguide lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
