Title :
Measurement of absorption coefficients of Ga0.47In0.53As over the wavelength range 1.0-1.7 μm
Author :
Humphreys, David A. ; King, R.J. ; Jenkins, Devon ; Moseley, A.J.
Author_Institution :
National Physical Laboratory, Division of Electrical Science, Teddington, UK
Abstract :
The absorption coefficient of p+-, p--and n--doped Ga0.47In0.53As layers, grown lattice-matched to InP, has been calculated over the wavelength range 1.0-1.7 μm from transmission and reflection measurements.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; light absorption; optical constants; semiconductor epitaxial layers; Ga0.47In0.53As layers; III-V semiconductor; absorption coefficients; reflection; transmission; wavelength 1 to 1.7 microns;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850839
