Title :
Green-emitting organic vertical-cavity laser pumped by InGaN-based laser diode
Author :
Sakata, H. ; Takeuchi, H.
Author_Institution :
Shizuoka Univ., Hamamatsu
Abstract :
An organic vertical-cavity surface-emitting laser is demonstrated, which is pumped by an InGaN-based blue laser diode. The vertical-cavity laser structure consists of a poly-N-vinylcarbazole film doped with Coumarin 540A and two Bragg reflectors made of TiO2/SiO2 quarter-wave thin films. By driving the pump laser diode with a pulse width of 3.5 ns, singlemode lasing was achieved at a wavelength of 540 nm for a threshold pump power of 137 mW/pulse.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; organic semiconductors; semiconductor lasers; surface emitting lasers; thin film circuits; Bragg reflectors; Coumarin 540A; InGaN; TiO2-SiO2; blue laser diode; green-emitting organic vertical-cavity laser; organic vertical-cavity surface-emitting laser; poly-N-vinylcarbazole film; pump laser diode; quarter-wave thin films; singlemode lasing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20079012
