• DocumentCode
    1013136
  • Title

    Millimetre-wave response of InGaAsP lasers

  • Author

    Bowers, John E.

  • Author_Institution
    AT&T Bell Laboratories, Holmdel, USA
  • Volume
    21
  • Issue
    25
  • fYear
    1985
  • Firstpage
    1195
  • Lastpage
    1197
  • Abstract
    The intensity modulation response of 1.3 ¿m-wavelength InGaAsP constricted-mesa lasers under pulsed operation is measured from 100 MHz to 40 GHz. 3 dB bandwidths of 25 GHz at 20°C and 31 GHz at ¿40°C are observed.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical modulation; semiconductor junction lasers; 3 dB bandwidths; InGaAsP constricted-mesa lasers; MM wave response; intensity modulation response; pulsed operation; semiconductor laser; wavelength 1.3 microns;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850844
  • Filename
    4251710
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1013136