Title :
Millimetre-wave response of InGaAsP lasers
Author_Institution :
AT&T Bell Laboratories, Holmdel, USA
Abstract :
The intensity modulation response of 1.3 ¿m-wavelength InGaAsP constricted-mesa lasers under pulsed operation is measured from 100 MHz to 40 GHz. 3 dB bandwidths of 25 GHz at 20°C and 31 GHz at ¿40°C are observed.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical modulation; semiconductor junction lasers; 3 dB bandwidths; InGaAsP constricted-mesa lasers; MM wave response; intensity modulation response; pulsed operation; semiconductor laser; wavelength 1.3 microns;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850844
