• DocumentCode
    1013152
  • Title

    A Y-domain magnetic thin film memory element

  • Author

    Lo, D.S. ; Cosimini, G.J. ; Zierhut, L.G. ; Dean, R.H. ; Paul, M.C.

  • Author_Institution
    Sperry Corporation, St. Paul, MN
  • Volume
    21
  • Issue
    5
  • fYear
    1985
  • fDate
    9/1/1985 12:00:00 AM
  • Firstpage
    1776
  • Lastpage
    1778
  • Abstract
    A memory element using Y-shaped domain wall structures in Ni-Fe films to represent data bits is presented. The memory element geometry, fabrication conditions, magnetization characteristics, and principle of operation are described. A 50-ns coincident current write and a 250-ns nondestructive read are described.
  • Keywords
    Magnetic film memories; Etching; Magnetic anisotropy; Magnetic domain walls; Magnetic fields; Magnetic films; Magnetization; Magnetoresistance; Perpendicular magnetic anisotropy; Read-write memory; Stripline;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1985.1064061
  • Filename
    1064061
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1013152