Title :
A Y-domain magnetic thin film memory element
Author :
Lo, D.S. ; Cosimini, G.J. ; Zierhut, L.G. ; Dean, R.H. ; Paul, M.C.
Author_Institution :
Sperry Corporation, St. Paul, MN
fDate :
9/1/1985 12:00:00 AM
Abstract :
A memory element using Y-shaped domain wall structures in Ni-Fe films to represent data bits is presented. The memory element geometry, fabrication conditions, magnetization characteristics, and principle of operation are described. A 50-ns coincident current write and a 250-ns nondestructive read are described.
Keywords :
Magnetic film memories; Etching; Magnetic anisotropy; Magnetic domain walls; Magnetic fields; Magnetic films; Magnetization; Magnetoresistance; Perpendicular magnetic anisotropy; Read-write memory; Stripline;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.1985.1064061
