High-detectivity (>1*10/sup 10/ cm square root Hz/W), InAsSb strained-layer superlattice, photovoltaic infrared detector

Author

Kurtz, S.R. ; Dawson, L.R. ; Zipperian, Thomas E. ; Whaley, R.D., Jr.

Author_Institution

Sandia Nat. Lab., Albuquerque, NM, USA

Volume

11

Issue

1

fYear

1990

Firstpage

54

Lastpage

56

Abstract

A high-detectivity infrared photodiode grown using molecular beam epitaxy (MBE) is discussed. It consisted of a p-\´i\´-n device embedded in an InAs/sub 0.15/Sb/sub 0.85//InSb strained-layer superlattice (SLS) with equal 150 AA-thick layers. The SLS was grown on top of a thick, composition-graded In/sub x/Ga/sub 1-x/Sb (x=1.0-0.9) strain-relief buffer on an InSb substrate. The p- and n-type dopants were Be and Se, respectively. The doping level in the \´i\´ region represents the background doping level in the MBE system. The surface passivated device exhibited detectivities >or=1*10/sup 10/ cm square root Hz/W at wavelengths >

Keywords

III-V semiconductors; indium antimonide; indium compounds; infrared detectors; p-i-n diodes; photodiodes; semiconductor superlattices; 150 AA; 4 to 10 micron; InAs/sub 0.15/Sb/sub 0.85/-In/sub x/Ga/sub 1-x/Sb-InSb; InAsSb strained layer superlattice; InAsSb:Be; InAsSb:Se; InSb substrate; MBE; background doping level; detectivities; high-detectivity infrared photodiode; i region; n-type dopants; p-i-n device; p-type dopants; strain-relief buffer; surface passivated device; wavelengths; Doping; Infrared detectors; Laser sintering; Molecular beam epitaxial growth; Photodiodes; Photovoltaic systems; Solar power generation; Substrates; Superlattices; Surface waves;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.46929

Filename

46929