Title :
W-band low-noise InAlAs/InGaAs lattice-matched HEMTs
Author :
Chao, P.C. ; Tessmer, A.J. ; Duh, Kuang-Hann G. ; Ho, Pin ; Kao, Ming-Yih ; Smith, Phillip M. ; Ballingall, James M. ; Liu, S.M. ; Jabra, A.A.
Author_Institution :
Gen. Electr. Co., Syracuse, NY, USA
Abstract :
Very low-noise 0.15- mu m gate-length W-band In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As/InP lattice-matched HEMTs are discussed. A maximum extrinsic transconductance of 1300 mS/mm has been measured for the device. At 18 GHz, a noise figure of 0.3 dB with an associated gain of 17.2 dB was measured. The device also exhibited a minimum noise figure of 1.4 dB with 6.6-dB associated gain at 93 GHz. A maximum available gain of 12.6 dB at 95 GHz, corresponding to a maximum frequency of oscillation, f/sub max/, of 405 GHz (-6-dB/octave extrapolation) in the device was measured. These are the best device results yet reported. These results clearly demonstrate the potential of the InP-based HEMTs for low-noise applications, at least up to 100 GHz.<>
Keywords :
III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.15 micron; 0.3 dB; 1.4 dB; 12.6 dB; 1300 mS; 17.2 dB; 18 GHz; 405 GHz; 6.6 dB; 93 GHz; 95 GHz; In/sub 0.52/Al/sub 0.48/As-In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As-InP; InP; W-band; available gain; extrinsic transconductance; gate-length; lattice-matched HEMTs; low-noise; low-noise applications; maximum oscillation frequency; noise figure; octave extrapolation; Doping; Electron mobility; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Molecular beam epitaxial growth; Noise figure; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
