Title :
Subthreshold current in MODFETs of tenth-micrometer gate
Author :
Jiang, Chun ; Tsui, Daniel C. ; Lin, B.J.F. ; Lee, H. ; Lepore, A. ; Levy, M.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Abstract :
The subthreshold current of conventional GaAs/AlGaAs MODFETs and pseudomorphic InGaAs/AlGaAs MODFETs with the gate length down to 0.12 mu m is investigated. The gate swing increases with the drain voltage and decreases with the gate length. It is attributed to charge injection from source to drain, limited by the channel potential barrier, which is a function of both the drain and the gate voltages. The pseudomorphic InGaAs/AlGaAs MODFETs show much better control than the conventional GaAs/AlGaAs MODFETs for the subthreshold current, especially with high drain biases. This shows that the pseudomorphic quantum-well structures can suppress the subthreshold current passing through the GaAs buffer region and reduce the undesirable short-channel effects.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; 0.12 micron; GaAs buffer region; GaAs-AlGaAs transistor; InGaAs-AlGaAs; channel potential barrier; charge injection; conventional MODFET; drain voltage; gate length; gate swing; high drain biases; pseudomorphic MODFET; pseudomorphic quantum-well structures; short-channel effects; subthreshold current; Doping; Gallium arsenide; HEMTs; Indium gallium arsenide; Leakage current; MODFETs; Quantum wells; Subthreshold current; Voltage;
Journal_Title :
Electron Device Letters, IEEE
