Title :
Simulation of submicrometer GaAs MESFET´s using a full dynamic transport model
Author :
Feng, Yu-kun ; Hintz, Adrian
Author_Institution :
Arbeitsbereich Hochfrequenztechnik, Tech. Univ. Hamburg-Harburg, West Germany
fDate :
9/1/1988 12:00:00 AM
Abstract :
Nonstationary transport effects in III-V compound semiconductors are taken into account by the well-known full dynamic transport model. A solution method for its equations is proposed and applied to a two-dimensional simulation of submicrometer GaAs MESFETs. Stationary and nonstationary results are compared with results from other transport models, namely a simplified dynamic transport model, the energy transport model, and the drift-diffusion model
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; GaAs; III-V compound semiconductors; full dynamic transport model; nonstationary transport effects; simulation; submicron MESFET; Circuit simulation; Conductors; Cost function; Gallium arsenide; Geometry; Hydrodynamics; Iterative methods; MESFETs; Microwave devices; Poisson equations;
Journal_Title :
Electron Devices, IEEE Transactions on
