• DocumentCode
    1013298
  • Title

    Microwave frequency beating between monolithically integrated quantum-dot ring lasers

  • Author

    Cao, H.-J. ; Withers, N.J. ; Smolyakov, G.A. ; Osinski, M.

  • Author_Institution
    AdTech Opt., Inc., Industry
  • Volume
    43
  • Issue
    25
  • fYear
    2007
  • Firstpage
    1456
  • Lastpage
    1458
  • Abstract
    The fabrication of quantum-dot-based optoelectronic integrated circuits incorporating twin ring diode lasers, waveguides, directional couplers, a Y-junction mixer, and photodetectors, is reported. Microwave frequency beating between longitudinal modes from individual ring diode lasers as well as beat notes between integrated twin ring diode lasers are demonstrated.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; masers; photodetectors; quantum dot lasers; ring lasers; InAs-InGaAs-GaAs; Y-junction mixer; directional couplers; microwave frequency beating; monolithically integrated quantum-dot ring lasers; photodetectors; quantum-dot-based optoelectronic integrated circuits; ring diode lasers; waveguides;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20073008
  • Filename
    4405621