Title :
The MOS-gated emitter switched thyristor
Author :
Baliga, B.Jayant
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
A monolithic device structure for obtaining MOS-gate-controlled turn-off of a thyristor is described. The device, called the emitter switched thyristor (EST), is designed so that the thyristor current flows through an enhancement-mode MOSFET, integrated into the base region of the thyristor, during the on state. Although this results in a small (0.25 V) increase in the forward voltage drop, it is demonstrated that excellent turn-off characteristics can be obtained, with typical turn-off of less than 1 mu s.<>
Keywords :
metal-insulator-semiconductor devices; thyristors; EST; MOS-gate-controlled turn-off; MOS-gated emitter switched thyristor; base region; enhancement-mode MOSFET; forward voltage drop; monolithic device structure; thyristor current; turn-off characteristics; Anodes; Cathodes; Equivalent circuits; Insulated gate bipolar transistors; MOSFET circuits; OFDM modulation; Power semiconductor devices; Tail; Threshold voltage; Thyristors;
Journal_Title :
Electron Device Letters, IEEE
