Title :
Monolithically integrated receiver front end: In0.53Ga 0.47As p-i-n amplifier
Author :
Cheng, C.-L. ; Chang, R. H P ; Tell, Benjamin ; Parker, Sandra M Zima ; Ota, Y. ; Vella-Coleiro, G.P. ; Miller, R.C. ; Zilko, John L. ; Kasper, B.L. ; Brown-goebeler, Kevin F. ; Mattera, Vincent D., Jr.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
fDate :
9/1/1988 12:00:00 AM
Abstract :
Monolithically integrated InGaAs p-i-n amplifiers have been successfully fabricated. The structure utilizes a vertical integration of a p-i-n diode and recessed-gate InP MISFETs, while maintaining a planar surface for fine-line photolithography. The preamplifier consists of a gain stage and a buffer stage, both made of InP MISFETs with aluminium phosphorous oxide as gate insulator. At 400 Mb/s, the receiver sensitivity is better than -27 dBm for 1×10-9 bit error rate
Keywords :
III-V semiconductors; digital communication systems; gallium arsenide; indium compounds; integrated optoelectronics; monolithic integrated circuits; optical communication equipment; preamplifiers; receivers; 400 Mbit/s; III-V semiconductor; In0.53Ga0.47As; InP MISFETs; InP-AlPO4; PIN diode; buffer stage; digital transmission; fine-line photolithography; gain stage; gate insulator; integrated optoelectronics; integrated receiver front end; monolithic IC; optical communication equipment; p-i-n amplifier; preamplifier; recessed-gate; vertical integration; Aluminum; Bit error rate; Indium gallium arsenide; Indium phosphide; Insulation; Lithography; MISFETs; P-i-n diodes; PIN photodiodes; Preamplifiers;
Journal_Title :
Electron Devices, IEEE Transactions on
