Temperature measurement technique using Pt diffusion into Au for ion-implanting wafers mounted on a spinning disc

A new technique using Au-on-Pt films to measure spinning wafer temperature during ion implantation has been developed. The technique utilises the phenomenon of Pt diffusion into Au in an Au/Pt system at high temperatures. Wafer temperature is calculated from the resistivity change of the Au film due to Pt diffusion. This technique was successfully applied to measure the temperature of wafers mounted on a spinning disc in oxygen-ion implantation.