• DocumentCode
    1013345
  • Title

    Analytic and explicit current model of undoped double-gate MOSFETs

  • Author

    Zhu, Z. ; Zhou, X. ; Rustagi, S.C. ; See, G.H. ; Lin, S. ; Zhu, G. ; Wei, C. ; Zhang, J.

  • Author_Institution
    Nanyang Technol. Univ., Singapore
  • Volume
    43
  • Issue
    25
  • fYear
    2007
  • Firstpage
    1464
  • Lastpage
    1466
  • Abstract
    A analytical and explicit drain-current equation has been derived for undoped symmetric double-gate MOSFETs. This current equation is expressed clearly with surface potential and verified with numerical results both in the subthreshold and the saturation region. It facilitates the calculation of drain current if only the surface potential is known, which is suitable for compact model development.
  • Keywords
    MOSFET; semiconductor device measurement; semiconductor device models; MOSFET; drain current equation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20072682
  • Filename
    4405626
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1013345