Improvement of hot-electron-induced degradation in MOS capacitors by repeated irradiation-then-anneal treatments

Author

Hwu, Jenn-Gwo ; Chen, Jen-Te

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

11

Issue

2

fYear

1990

Firstpage

82

Lastpage

84

Abstract

Improvement of the SiO/sub 2//Si interface degradation due to hot-electron injections from silicon by repeated irradiation-then-anneal treatments is described. Each treatment includes an irradiation of Co-60 with a total dose of 10/sup 6/ rd (SiO/sub 2/) and an anneal in N/sub 2/ for 10 min successively. It is found that the sensitivity to hot-electron induced damage decreases gradually as the number of irradiation-then-anneal treatments increases. After three such treatments, the MOS capacitor shows excellent behavior in terms of its hardness to hot-electron-induced degradation.<>

Keywords

annealing; electron beam effects; hot carriers; metal-insulator-semiconductor devices; semiconductor-insulator boundaries; silicon; silicon compounds; /sup 60/Co; MOS capacitor; SiO/sub 2/-Si; hardness; hot-electron injections; hot-electron-induced degradation; irradiation-then-anneal treatments; Aluminum; Annealing; Capacitive sensors; Degradation; MOS capacitors; Secondary generated hot electron injection; Silicon; Substrates; Temperature; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.46935

Filename

46935