DocumentCode :
1013357
Title :
Pulsed oscillation of GaAlAs/GaAs surface-emitting injection laser
Author :
Ibaraki, A. ; Ishikawa, Seiichiro ; Ohkouchi, S. ; Iga, Kenichi
Author_Institution :
Tokyo Institute of Technology, Yokohama, Japan
Volume :
20
Issue :
10
fYear :
1984
Firstpage :
420
Lastpage :
422
Abstract :
We report the fabrication and lasing properties of the first GaAlAs/GaAs surface-emitting injection laser. The threshold current was 330 mA for 20 ¿mÿ electrode at 77 K under pulsed conditions (¿ = 7960 Å). In some devices we achieved room temperature pulsed oscillation.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; GaAlAs/GaAs surface-emitting injection laser; III-V semiconductors; lasing properties; pulsed conditions; semiconductor junction lasers; threshold current;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19840291
Filename :
4251736
Link To Document :
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