Title :
Pulsed oscillation of GaAlAs/GaAs surface-emitting injection laser
Author :
Ibaraki, A. ; Ishikawa, Seiichiro ; Ohkouchi, S. ; Iga, Kenichi
Author_Institution :
Tokyo Institute of Technology, Yokohama, Japan
Abstract :
We report the fabrication and lasing properties of the first GaAlAs/GaAs surface-emitting injection laser. The threshold current was 330 mA for 20 ¿mÿ electrode at 77 K under pulsed conditions (¿ = 7960 Å). In some devices we achieved room temperature pulsed oscillation.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; GaAlAs/GaAs surface-emitting injection laser; III-V semiconductors; lasing properties; pulsed conditions; semiconductor junction lasers; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19840291
