• DocumentCode
    1013357
  • Title

    Pulsed oscillation of GaAlAs/GaAs surface-emitting injection laser

  • Author

    Ibaraki, A. ; Ishikawa, Seiichiro ; Ohkouchi, S. ; Iga, Kenichi

  • Author_Institution
    Tokyo Institute of Technology, Yokohama, Japan
  • Volume
    20
  • Issue
    10
  • fYear
    1984
  • Firstpage
    420
  • Lastpage
    422
  • Abstract
    We report the fabrication and lasing properties of the first GaAlAs/GaAs surface-emitting injection laser. The threshold current was 330 mA for 20 ¿mÿ electrode at 77 K under pulsed conditions (¿ = 7960 Å). In some devices we achieved room temperature pulsed oscillation.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; GaAlAs/GaAs surface-emitting injection laser; III-V semiconductors; lasing properties; pulsed conditions; semiconductor junction lasers; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19840291
  • Filename
    4251736
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1013357