Nonoverlapping super self-aligned device structure for high-performance VLSI

Author

Chiu, Tzu-Yin ; Chin, Gen M. ; Lau, Maureen Y. ; Hanson, Ronald C. ; Morris, Mark D. ; Lee, Kwing F. ; Voshchenkov, Alexander M. ; Swartz, Robert G. ; Archer, Vance D. ; Liu, Mark T Y ; Finegan, Sean N. ; Feuer, Mark D.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

Volume

11

Issue

2

fYear

1990

Firstpage

85

Lastpage

87

Abstract

The nonoverlapping super self-aligned structure (NOVA) is reported. Because of its nonoverlapping nature, this structure can be applied equally well to bipolar, CMOS, or BiCMOS processes. This structure effectively minimizes parasitic capacitance and resistance for both the MOS and bipolar devices. CMOS and bipolar devices are integrated into a high-performance BiCMOS technology. CMOS and emitter-coupled logic (ECL) ring oscillators with 1.5- mu m lithography are reported to have delays of 128 and 87 ps/stage, respectively.<>

Keywords

VLSI; integrated circuit technology; monolithic integrated circuits; 1.5 micron; BiCMOS processes; CMOS; NOVA; VLSI; bipolar; emitter-coupled logic; lithography; nonoverlapping super self-aligned structure; parasitic capacitance; parasitic resistance; ring oscillators; BiCMOS integrated circuits; CMOS technology; Conductivity; Electrodes; Etching; Fabrication; MOS devices; Resists; Silicides; Very large scale integration;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.46936

Filename

46936