DocumentCode
1013423
Title
A two-dimensional numerical approach to achieve a silicon BCCD cell optimal design
Author
Carquet, Michel ; Rigaud, Dominique ; Touboul, André ; Thénoz, Yves
Author_Institution
Centre d´´Electron. de Monpellier, CNRS, Montpellier, France
Volume
35
Issue
9
fYear
1988
fDate
9/1/1988 12:00:00 AM
Firstpage
1445
Lastpage
1455
Abstract
The single charge stored in a silicon buried-channel charge-coupled device (BCCD) is studied under different technological specification. The approach is to seek an accurate determination of this parameter by using a 2-D numerical device analysis program. The calculated data are compared to experimentally measured BCCD characteristics. These investigations have led to some trends for design optimization for designers whose main motivation is the scaling down of BCCDs
Keywords
charge-coupled devices; elemental semiconductors; semiconductor device models; silicon; BCCD cell optimal design; CCD; Si; buried-channel charge-coupled device; design optimization; modelling; numerical device analysis program; scaling down; semiconductor; two-dimensional numerical approach; Boron; Charge coupled devices; Design optimization; Helium; Implants; Signal design; Silicon; Solid state circuits; Substrates; Very large scale integration;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.2577
Filename
2577
Link To Document