Frequency characteristics of a semiconductor rectifier at voltages greater than kT/q

In this paper, the frequency characteristics of a half-wave p-n junction rectifier with a resistance load are analyzed for applied voltages greater than kT/q. Beginning with the derivation of an implicit integral equation which describes the large-signal operation of this circuit, the effect of frequency on the rectification efficiency is then obtained from an iterative numerical solution of this equation using an IBM 650 computer. Contrary to the small-signal theory developed by Kalashnikov and Penin, it is found that at higher applied voltages the half-power frequency is very dependent on voltage as well as load resistance, carrier lifetime and reverse saturation current. The relationships between the half-power frequency and these parameters are shown graphically and the results are compared to the small-signal theory for small applied voltages.