1 W Ku-band AlGaAs/GaAs power HBT´s with 72% peak power-added efficiency

Author

Shimura, Teruyuki ; Sakai, Masayuki ; Izumi, Shigekazu ; Nakano, Hirofumi ; Matsuoka, Hiroshi ; Inoue, Akira ; Udomoto, Junichi ; Kosaki, Katsuya ; Kuragaki, Takeshi ; Takano, Hirozo ; Sonoda, Takuji ; Takamiya, Saburo

Author_Institution

Mitsubishi Electr. Corp., Hyogo, Japan

Volume

42

Issue

11

fYear

1995

fDate

11/1/1995 12:00:00 AM

Firstpage

1890

Lastpage

1896

Abstract

High power and high-efficiency multi-finger heterojunction bipolar transistors (HBT´s) have been successfully realized at Ku-band by using an optimum emitter ballasting resistor and a plated heat sink (PHS) structure. Output power of 1 W with power-added efficiency (PAE) of 72% at 12 GHz has been achieved from a 10-finger HBT with the total emitter size of 300 μm². 72% PAE with the output power density of 5.0 W/mm is the best performance ever reported for solid-state power devices with output powers more than 1 W at Ku-band

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heat sinks; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; 1 W; 12 GHz; 72 percent; AlGaAs-GaAs; AlGaAs/GaAs power HBTs; Ku-band; emitter ballasting resistor; multi-finger heterojunction bipolar transistors; plated heat sink; power-added efficiency; solid-state power devices; Doping; Electrodes; Electronic ballasts; Epitaxial layers; Gallium arsenide; Gold; Heat sinks; Heterojunction bipolar transistors; Power generation; Resistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.469393

Filename

469393