Utilizing Reverse Short-Channel Effect for Optimal Subthreshold Circuit Design

Author

Kim, Tae-Hyoung ; Keane, John ; Eom, Hanyong ; Kim, Chris H.

Author_Institution

Univ. of Minnesota, Minneapolis

Volume

15

Issue

7

fYear

2007

fDate

7/1/2007 12:00:00 AM

Firstpage

821

Lastpage

829

Abstract

The impact of the reverse short-channel effect (RSCE) on device current is stronger in the subthreshold region due to reduced drain-induced barrier lowering (DIBL) and the exponential dependency of current on threshold voltage. This paper describes a device-size optimization method for subthreshold circuits utilizing RSCE to achieve high drive current, low device capacitance, less sensitivity to random dopant fluctuations, better subthreshold swing, and improved energy dissipation. Simulation results using ISCAS benchmark circuits show that the critical path delay, power consumption, and energy consumption can be improved by up to 10.4%, 34.4%, and 41.2%, respectively.

Keywords

VLSI; low-power electronics; network synthesis; power consumption; ISCAS benchmark circuits; circuit optimization; critical path delay; device current; device-size optimization method; energy consumption; exponential dependency; optimal subthreshold circuit design; power consumption; reduced drain-induced barrier lowering; reverse short-channel effect; Capacitance; Circuit simulation; Circuit synthesis; Delay; Drives; Energy consumption; Energy dissipation; Fluctuations; Optimization methods; Threshold voltage; Circuit optimization; process variation; reverse short-channel effect (RSCE); subthreshold operation;

fLanguage

English

Journal_Title

Very Large Scale Integration (VLSI) Systems, IEEE Transactions on

Publisher

ieee

ISSN

1063-8210

Type

jour

DOI

10.1109/TVLSI.2007.899239

Filename

4252121