• DocumentCode
    1013722
  • Title

    The formation of a p-n junction by Ni diffusion and leaching

  • Author

    Daskam, S.W. ; Kestenbaum, A.L.

  • Author_Institution
    Radio Corp. of America, Somerville, N. J.
  • Volume
    6
  • Issue
    2
  • fYear
    1959
  • fDate
    4/1/1959 12:00:00 AM
  • Firstpage
    244
  • Lastpage
    244
  • Keywords
    Alloying; Ceramics; Charge carrier lifetime; Diodes; Electric variables; Electrodes; Fabrication; Germanium alloys; Impurities; Leaching; Nickel; P-n junctions; Silicon; Switches; Tin; Voltage; Wafer bonding;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0096-2430
  • Type

    jour

  • DOI
    10.1109/T-ED.1959.14490
  • Filename
    1472533