Title :
The formation of a p-n junction by Ni diffusion and leaching
Author :
Daskam, S.W. ; Kestenbaum, A.L.
Author_Institution :
Radio Corp. of America, Somerville, N. J.
fDate :
4/1/1959 12:00:00 AM
Keywords :
Alloying; Ceramics; Charge carrier lifetime; Diodes; Electric variables; Electrodes; Fabrication; Germanium alloys; Impurities; Leaching; Nickel; P-n junctions; Silicon; Switches; Tin; Voltage; Wafer bonding;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1959.14490
