• DocumentCode
    1013754
  • Title

    Design and fabrication of high-frequency diffused germanium transistors

  • Author

    Vanderwal, N.C.

  • Author_Institution
    Bell Telephone Laboratories, Inc., Allentown, Pa.
  • Volume
    6
  • Issue
    2
  • fYear
    1959
  • fDate
    4/1/1959 12:00:00 AM
  • Firstpage
    244
  • Lastpage
    244
  • Keywords
    Alloying; Ceramics; Charge carrier lifetime; Diodes; Electric variables; Electrodes; Electron devices; Fabrication; Germanium; Impurities; Leaching; Nickel; P-n junctions; Silicon; Switches; Voltage; Wafer bonding;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0096-2430
  • Type

    jour

  • DOI
    10.1109/T-ED.1959.14493
  • Filename
    1472536
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1013754