Title :
Characterization of a 4 Mbit bubble memory device with "Wide gap" permalloy propagation tracks
Author :
Inoue, H. ; Amatsu, M. ; Yanase, T. ; Majima, T. ; Kaneko, Y. ; Orihara, S. ; Iwasa, S.
Author_Institution :
Fujitsu Laboratories, Atsugi, Japan
fDate :
9/1/1985 12:00:00 AM
Abstract :
A 4 Mbit bubble memory device with "wide gap" propagation tracks has been fabricated and characterized. The 4 Mbit device is composed of four 1 Mbit blocks which are architecturally designed to be compatible with an existing 1 Mbit device, and the relaxed function design has been employed to achieve functional compatibility, in addition to architectural compatibility. The results obtained in the characterization of functions, such as a generator, a detector, swap gates and replicate gates, show the realization to guarantee the same operational conditions as those of the 1 Mbit device. The overall operating margins of the fabricated chips were measured in the temperature range of 0°C to 90°C, and the temperature coefficients were found to be -0.18 %/°C to -0.20 %/°C. A compact package for the 4 Mbit chip was designed. The package size is 36.4 × 34 × 11.5 mm3and the number of pin-outs is 42. A sufficient operating margin was confirmed in the case temperature range of -10°C to 90°C. The power consumption of the device is 1.1 W, which is approximately 0.6 to 0.7 times as much as those reported so far.
Keywords :
Magnetic bubble memories; Permalloy memories; Character generation; Conductors; Detectors; Energy consumption; Packaging; Printing; Propagation losses; Semiconductor device measurement; Temperature distribution; Temperature measurement;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.1985.1064121